DMS3016SSSA
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Features
Mechanical Data
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DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
? Low R DS(ON) - minimizes conduction losses
? Ultra Low V SD – enhanced to reduce losses due to body
diode conduction
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
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Low Q rr - lower Q rr of the integrated Schottky reduces body
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Weight: 0.072 grams (approximate)
diode switching losses
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Low gate capacitance (Q g /Q gs ) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Avalanche rugged – I AR and E AR rated
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Lead Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Ordering Information (Note 3)
Top View
S
S
S
G
Top View
Internal Schematic
D
D
D
D
Notes:
Part Number
DMS3016SSSA-13
1. No purposefully added lead.
Case
SO-8
Packaging
2500 / Tape & Reel
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
S3016SA
Part no.
YY WW
Xth week: 01 ~ 53
Year: “09” = 2009
1
4
Year: “10” = 2010
DMS3016SSSA
Document number: DS35073 Rev. 1 - 2
1 of 6
www.diodes.com
October 2010
? Diodes Incorporated
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